vesd05a6c-ha3 document number 84730 rev. 1.0, 04-nov-05 vishay semiconductors www.vishay.com 1 6 54 1 2 3 7 19 8 06-1 19369 2 3 6 5 4 7 6-line esd protection diode array in llp75 features ? ultra compact llp75 package 6-line esd-protection low leakage current esd protection to iec 61000-4-2 30 kv (air) esd protection to iec 61000-4-2 30 kv (contact) lead (pb)-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec mechanical data case: llp75-7a (plastic package). non magnetic molding compound flammability rating: ul 94 v-0 terminals: high temperature soldering guaranteed: 260 c/10 sec. at terminals weight: 5 mg packaging codes/options: gs18 = 10 k per 13" reel (8 mm tape), 10 k/box gs08 = 3 k per 7" reel (8 mm tape), 15 k/box marking: square = pin 1 marking ?al? = type code for vesd05a6c-ha3 = date code (example only) absolute maximum ratings ratings at 25 c, ambient temperature unless otherwise sp ecified valid for each single diode between pin 1-6 and pin 7 thermal characteristics ratings at 25 c, ambient temperature unless otherwise specified parameter symbol value unit esd air discharge per iec 61000-4-2 v esd 30 kv esd contact discharge per iec 61000-4-2 v esd 30 kv peak pulse power 8/20 s waveform p ppm 210 w peak pulse current 8/20 s waveform i ppm 14 a parameter symbol value unit operating temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c e3 sd al sd
www.vishay.com 2 document number 84730 rev. 1.0, 04-nov-05 vesd05a6c-ha3 vishay semiconductors electrical characteristics (t a = 25 c unless otherwise specified) valid for each single diode between pin 1-6 and pin 7 typical characteristics (t amb = 25 c unless otherwise specified) parameter test conditions synbol min. ty p. max. unit reverse stand-off voltage at max. reverse current v rwm 5 v max. reverse current at v r = 5 v i r 1a max. clamping voltage at i pp = 14 a acc. iec 61000-4-5 v c 15 v max. forward clamping voltage at i pp = 14 a acc. iec 61000-4-5 v f 5.2 6 v max. peak pulse current acc. iec 61000-4-5 see fig. 1 i ppm - 30 14 a min. reverse breakdown voltage at i r = 1 ma v br 6.0 6.8 7.5 v capacitance at v r = 0 v ; f = 1 mhz c d 120 150 pf forward voltage at i f = 1 a ; t p < 300 s v f 1.3 1.5 v esd-clamping voltage (overshoot) at + 8 kv esd-pulse acc. iec 61000-4-2 v c-esd 45 v esd-clamping voltage (undershoot) at - 8 kv esd-pulse acc. iec 61000-4-2 v c-esd - 38 v figure 1. 8/20 s peak pulse current wave form acc. iec 61000-4-5 0 % 20 % 40 % 60 % 80 % 100 % 0 10203040 time in s i ppm 20 s to 50 % 8 s to 100 % 19333 figure 2. typical capacitance c d vs. reverse voltage v r 0 20 40 60 80 100 120 140 012345 v r in v c d in pf f = 1mhz 19482
vesd05a6c-ha3 document number 84730 rev. 1.0, 04-nov-05 vishay semiconductors www.vishay.com 3 figure 3. typical forward current i f vs. forward voltage v f figure 4. typical reverse voltage v r vs. reverse current i r figure 5. typical clamping volt age vs. peak pulse current i pp 0.001 0.01 0.1 1 10 100 0.5 0.6 0.7 0.8 0.9 v f in v i f in ma 19483 0 1 2 3 4 5 6 7 8 0.01 0.1 1 10 100 1000 i r in a v r in v 19484 0 2 4 6 8 10 12 14 0 1 2 3 4 5 6 7 8 9 101112131415 i pp in a v c in v measured acc. iec 61000-4-5 (8/20s - wave form) reverse forward 19485 figure 6. typical clamping perfo rmance on + 8 kv - esd events (acc. iec 61000-4-2) figure 7. typical clamping perfo rmance on - 8 kv - esd events (acc. iec 61000-4-2) figure 8. typical max. clamping voltage at esd contact discharge (acc. iec 61000-4-2) -10 0 10 20 30 40 50 -10 0 10 20 30 40 50 60 70 80 90 t in ns v c-esd in v 19486 v esd = + 8kv acc. iec 61000-4-2 -40 -30 -20 -10 0 10 20 -10 0 10 20 30 40 50 60 70 80 90 t in ns v c-esd in v 19487 acc. iec 61000-4-2 v esd = + 8kv -200 -150 -100 -50 0 50 100 150 200 0 5 10 15 20 25 30 35 v esd in kv v c-esd in v acc. iec 61000-4-2 contact discharge 19488
www.vishay.com 4 document number 84730 rev. 1.0, 04-nov-05 vishay vesd05a6c-ha3 vishay semiconductors application note: a) with the vesd05a6c-ha3 6 different signal or data lines can be clamped to ground. due to the different clamping levels in forward and reverse direction the vesd05a6c-ha3 clamping behavior is bi directional and as ymmetrical (bias) b) if symmetrical clamping behaviour is required the vesd05a6c-ha3 can also be used as a bi directional sy mmetrical protection up to 5 lines. in this case pin no. 7 must not be connected. l1 l2 l 3 l4 l5 l6 19 8 07 l1 l2 l 3 l4 l5 19 8 0 8
vesd05a6c-ha3 document number 84730 rev. 1.0, 04-nov-05 vishay semiconductors www.vishay.com 5 package dimensions in mm (inches) llp75-7a 19657
www.vishay.com 6 document number 84730 rev. 1.0, 04-nov-05 vesd05a6c-ha3 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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